Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective

摘要

By generalizing the classical linear response theory of stick percolation tononlinear regime, we find that the drain current of a Nanobundle Thin FilmTransistor (NB-TFT) is described under a rather general set of conditions by auniversal scaling formula ID = A/LS g(LS/LC, rho_S * LS * LS) f(VG, VD), whereA is a technology-specific constant, g is function of geometrical factors likestick length (LS), channel length (LC), and stick density (rho_S) and f is afunction of drain (VD) and gate (VG) biasing conditions. This scaling formulaimplies that the measurement of full I-V characteristics of a single NB-TFT issufficient to predict the performance characteristics of any other transistorwith arbitrary geometrical parameters and biasing conditions.